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features? built using the advantages and compatibilityof cmos and ixys hdmos tm processes ? latch-up protected ? high peak output current: 4a peak ? wide operating range: 4.5v to 35v ? high capacitive load drive capability: 1800pf in <15ns ? matched rise and fall times? low propagation delay time ? low output impedance ? low supply current ? two drivers in single chip applications? driving mosfets and igbts ? motor controls ? line drivers ? pulse generators ? local power on/off switch ? switch mode power supplies (smps) ? dc to dc converters ? pulse transformer driver ? class d switching amplifiers ? limiting di/dt under short circuit ixdn404 / ixdi404 / ixdf404 first release copyright ? ixys corporation 2004 general descriptionthe ixdn404/ixdi404/ixdf404 is comprised of two 4 ampere cmos high speed mosfet drivers. each output can source and sink 4a of peak current while producing voltage rise and fall times of less than 15ns to drive the latest ixys mosfets and igbt's. the input of the driver is compatible with ttl or cmos and is fully immune to latch up over the entire operating range. a patent-pending circuit virtually eliminates cmos power supply cross conduction and current shoot-through. improved speed and drive capabilities are further enhanced by very low, matched rise and fall times. the ixdn404 is configured as a dual non-inverting gate driver, the ixdi404 is a dual inverting gate driver, and the ixdf404 is a dual inverting + non-inverting gate driver. the ixdn404/ixdi404/ixdf404 family are available in the standard 8 pin p-dip (pi), soic-8 (sia) and soic-16 (sia-16) packages. for enhanced thermal performance, the sop-8 and sop-16 are also available in a package with an exposed grounded metal back as the si and si-16 repectively. 4 ampere dual low-side ultrafast mosfet drivers part number package type temp. range configuration ixdn404pi 8-pin pdip ixdn404si 8-pin soic with grounded metal back IXDN404SIA 8-pin soic ixdn404si-16 16-pin soic with grounded metal back IXDN404SIA-16 16-pin soic -55 c to +125 c dual non inverting ixdi404pi 8-pin pdip ixdi404si 8-pin soic with grounded metal back ixdi404sia 8-pin soic ixdi404si-16 16-pin soic with grounded metal back ixdi404sia-16 16-pin soic -55 c to +125 c dual inverting ixdf404pi 8-pin pdip ixdf404si 8-pin soic with grounded metal back ixdf404sia 8-pin soic ixdf404si-16 16-pin soic with grounded metal back ixdf404sia-16 16-pin soic -55 c to +125 c inverting + non inverting ordering informationnote: mounting or solder tabs on all packages are connected to ground ds99018d(11/10)
2 ixdn404 / ixdi404 / ixdf404 figure 2 - ixdi404 dual inverting 4a gate driver functional block diagram figure 3 - ixdf404 inverting + non-inverting 4a gate driver functional block diagram n p n p out a vcc out b in a in b gnd anti-cross conduction circuit * anti-cross conduction circuit * n p n p out a vcc out b in a in b gnd anti-cross conduction circuit * anti-cross conduction circuit * * patent pending n p n p out a vcc out b in a in b gnd anti-cross conduction circuit * anti-cross conduction circuit * figure 1 - ixdn404 dual 4a non-inverting gate driver functional block diagram
3 ixdn404 / ixdi404 / ixdf404 unless otherwise noted, t a = 25 o c, 4.5v v cc 35v . all voltage measurements with respect to gnd. device configured as described in test conditions . all specifications are for one channel. electrical characteristics symbol parameter test conditions min typ max units v ih high input voltage 4.5v v cc 18v 2.5 v v il low input voltage 4.5v v cc 18v 0.8 v v in input voltage range -5 v cc + 0.3 v i in input current 0v v in v cc -10 10 a v oh high output voltage v cc - 0.025 v v ol low output voltage 0.025 v r oh output resistance @ output high v cc = 18v 2 2.5 r ol output resistance @ output low v cc = 18v 1.5 2 i peak peak output current v cc = 18v 4 a i dc continuous output current 1 a t r rise time c l =1800pf vcc=18v 16 18 ns t f fall time c l =1800pf vcc=18v 13 17 ns t ondly on-time propagation delay c l =1800pf vcc=18v 36 40 ns t offdly off-time propagation delay c l =1800pf vcc=18v 35 39 ns v cc power supply voltage 4.5 18 35 v i cc power supply current v in = 3.5v v in = 0v v in = + v cc 1 0 3 10 10 ma a a absolute maximum ratings (note 1) parameter value supply voltage 40v all other pins -0.3v to v cc + 0.3v junction temperature 150 o c storage temperature -65 o c to 150 o c soldering lead temperature (10 seconds maximum) 300 o c operating ratings specifications subject to change without noticenote 1: operating the device beyond parameters with listed ?absolute maximum ratings? may cause permanent damage to the device. typical values indicate conditions for which the device is intended to be functional, but do notguarantee specific performance limits. the guaranteed specifications apply only for the test conditions listed. exposure to absolute maximum rated conditions for extended periods may affect device reliability. thermal resistance (to ambient) 8 pin pdip (pi) ( ja ) 120 k/w 8 pin soic (sia) 110 k/w 16 pin soic (sia-16) ( ja ) 110 k/w ja with heat sink ** heat sink area of 1 cm 2 8 pin soic 95 k/w 16 pin soic-ct 95 k/wheat sink area of 3 cm 2 8 pin soic 85 k/w 16 pin soic-ct 85 k/w ** device soldered to metal back pane. heat sink area is 1 oz. copper on 1 side of 0.06" thick fr4 pc board. parameter value operating temperature range -55 o c to 125 o c thermal resistance (junction to case) ( jc ) 8 pin soic (si) 16 pin soic (si-16) 10 k/w 10 k/w
4 ixdn404 / ixdi404 / ixdf404 symbol parameter test conditions min typ max units v ih high input voltage 4.5v v cc 18v 2.4 v v il low input voltage 4.5v v cc 18v 0.8 v v in input voltage range -5 v cc + 0.3 v i in input current 0v v in v cc -10 10 a v oh high output voltage v cc - 0.025 v v ol low output voltage 0.025 v r oh output resistance @ output high v cc = 18v 3.4 r ol output resistance @ output low v cc = 18v 2 i peak peak output current v cc = 18v 3.2 a i dc continuous output current 1 a t r rise time c l =1000pf vcc=18v 11 ns t f fall time c l =1000pf vcc=18v 13 ns t ondly on-time propagation delay c l =1000pf vcc=18v 60 ns t offdly off-time propagation delay c l =1000pf vcc=18v 59 ns v cc power supply voltage 4.5 18 35 v i cc power supply current v in = 3.5v v in = 0v v in = + v cc 1 0 3 10 10 ma a a electrical characteristics unless otherwise noted, temperature over -55 o c to 150 o c, 4.5v v cc 35v . all voltage measurements with respect to gnd. device configured as described in test conditions . all specifications are for one channel. specifications subject to change without notice
5 ixdn404 / ixdi404 / ixdf404 pin description symbol function description in a a channel input a channel input signal-ttl or cmos compatible. gnd ground the system ground pin. internally connected to all circuitry, this pin provides ground reference for the entire chip. this pin shou ld be connected to a low noise analog ground plane for optimum performance. in b b channel input b channel input signal-ttl or cmos compatible. out b b channel output b channel driver output. for application purposes, this pin is connected via a resistor to a gate of a mosfet/igbt. vcc supply voltage positive power-supply voltage input. this pin prov ides power to the entire chip. the range for this voltage is from 4.5v to 3 5v. out a a channel output a channel driver output. for application purposes, this pin is connected via a resistor to a gate of a mosfet/igbt. figure 4 - characteristics test diagram caution: these devices are sensitive to electrostatic discharge; follow proper esd procedures whenhandling and assembling this component. 1 2 3 4 5 6 7 8 nc nc in a gnd in b out b vcc out a 10uf 25v vcc 1800 pf 1800 pf agilent 1147a current probe agilent 1147a current probe
6 ixdn404 / ixdi404 / ixdf404 output fall times vs. load capacitance 0 10 20 30 40 50 60 70 80 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 load capacitance (pf) fall time (ns) 8v 10v 12v 18v 25v 35v fall times vs. supply voltage 0 10 20 30 40 50 60 70 80 5 10 15 20 25 30 35 supply voltage (v) fall times (ns) 200pf 1000pf 1800pf 4700pf 6800pf 10000pf rise times vs. supply voltage 0 10 20 30 40 50 60 70 80 5 10 15 20 25 30 35 supply voltage (v) rise time (ns) 200pf 1000pf 1800pf 4700pf 6800pf 10000pf output rise times vs. load capacitance 0 10 20 30 40 50 60 70 80 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 load capacitance (pf) rise time (ns) 8v 10v 12v 18v 25v 35v rise and fall times vs. temperature c l = 1000pf, v cc = 18v 0 2 4 6 8 10 12 14 -60 -10 40 90 140 190 temperature (c) time (ns) t f t r typical performance characteristics fig. 5 fig. 6 fig. 7 fig. 8 fig. 9 fig. 10 m ax / min input vs. tem perature c l = 1000pf, v cc = 18v 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 -60 -10 40 90 140 190 temperature (c) max / min input voltage min input high max input low
7 ixdn404 / ixdi404 / ixdf404 supply current vs. frequency vcc = 18v 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 frequency (khz) supply current (ma) 200 pf 1000 pf 1800 pf 6800 pf 10000 pf 4700 pf supply current vs. frequency vcc = 8v 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 frequency (khz) supply current (ma) 200 pf 1000 pf 1800 pf 4700 pf 6800 pf 10000 pf supply current vs. frequency vcc = 12v 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 frequency (khz) supply current (ma) 200 pf 1000 pf 1800 pf 4700 pf 6800 pf 10000 pf supply current vs. load capacitance vcc = 12v 0 10 20 30 40 50 60 70 80 90 100 100 1000 10000 load capacitance (pf) supply current (ma) 10 khz 50 khz 100 khz 500 khz 1 mhz 2 mhz supply current vs. load capacitance vcc = 18v 0 10 20 30 40 50 60 70 80 90 100 100 1000 10000 load capacitance (pf) supply current (ma) 10 khz 50 khz 100 khz 500 khz 1 mhz 2 mhz supply current vs. load capacitance vcc = 8v 0 10 20 30 40 50 60 70 80 90 100 100 1000 10000 load capacitance (pf) supply current (ma) 10 khz 50 khz hz 100 khz 500 khz 1 mhz 2 mhz fig. 12 fig. 14fig. 16 fig. 11 fig. 13 fig. 15
8 ixdn404 / ixdi404 / ixdf404 supply current vs. load capacitance vcc = 35v 0 10 20 30 40 50 60 70 80 90 100 100 1000 10000 load capacitance (pf) supply current (ma) 10 khz 50 khz 100 khz 1 mhz 500 khz 2 mhz propagation delay times vs. temperature c l = 1000pf, v cc = 18v 20 25 30 35 40 45 50 55 60 -60 -10 40 90 140 190 temperature (c) time (ns) t ondly t offdly supply current vs. frequency vcc = 35v 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 frequency (khz) supply current (ma) 200 pf 1000 pf 1800 pf 4700 pf 6800 pf 10000 pf propagation delay vs. input voltage c l = 1800pf v cc = 15v 20 25 30 35 40 45 50 2 4 6 8 10 12 input voltage (v) propagation delay (ns) t ondly t offdly propagation delay vs. supply voltage c l = 1800pf v in = 5v@1khz 0 10 20 30 40 50 60 70 5 10 15 20 25 30 35 supply voltage (v) propagation delay (ns) t ondly t offdly fig. 18 fig. 17 fig. 19 fig. 20 fig. 21 fig. 22 q u ie s c e n t s u p p ly c u rre n t v s . t e m p e ra tu re v c c = 1 8 v , v in = 5 v @ 1 k h z , c l = 1 0 0 0 p f 0 0 .0 5 0 .1 0 .1 5 0 .2 0 .2 5 0 .3 -6 0 -1 0 4 0 9 0 1 4 0 1 9 0 t e m p e ra tu re (c ) quiescent v cc input current (ma)
9 ixdn404 / ixdi404 / ixdf404 high state ouput resistance vs. supply voltage 0 1 2 3 4 5 6 5 10 15 20 25 30 35 supply voltage (v) high state output resistance (ohms) low state output resistance vs. supply voltage 0 1 2 3 4 5 6 5 10 15 20 25 30 35 supply voltage (v) low state output resistance (ohms) v cc vs. p channel output current -12 -10 -8 -6 -4 -2 0 5 10 15 20 25 30 35 v cc (v) p channel output current (a) fig. 25 fig. 26 fig. 23 fig. 24 n channel output current vs. temperature v cc = 18v c l = 1000pf 0 1 2 3 4 5 6 -80 -30 20 70 120 170 temperature (c) n channel output current (a) p channel output current vs. temperature v cc = 18v, c l = 1000pf 0 1 2 3 4 5 6 -80 -30 20 70 120 170 temperature (c) p channel output current (a) fig. 27 fig. 28 vcc vs. n channel ouput current 0 2 4 6 8 10 12 5 10 15 20 25 30 35 vcc (v) n channel output current (a)
10 ixdn404 / ixdi404 / ixdf404 pin configurations 1 23 4 5 6 7 8 in a gnd inb o ut a v s o ut b nc nc 8 lead pdip (pi) 8 pin soic (si) ixdn404 1 23 4 5 6 7 8 in a gnd inb o ut a v s o ut b nc nc 8 lead pdip (pi) 8 pin soic (si) ixdi404 16 pin soic ixdn404si-16 12 3 4 5 6 7 8 9 10 11 12 13 14 15 16 nc in a nc gnd gnd nc in b nc nc o ut b o ut b vcc vcc o ut a o ut a nc 1 23 4 5 6 7 8 in a gnd inb o ut a v s o ut b nc nc 8 lead pdip (pi) 8 pin soic (si) ixdf404 16 pin soic ixdi404si-16 12 3 4 5 6 7 8 9 10 11 12 13 14 15 16 nc in a nc gnd gnd nc in b nc nc o ut b o ut b vcc vcc o ut a o ut a nc 16 pin soic ixdf404si-16 12 3 4 5 6 7 8 9 10 11 12 13 14 15 16 nc in a nc gnd gnd nc in b nc nc o ut b o ut b vcc vcc o ut a o ut a nc when designing a circuit to drive a high speed mosfetutilizing the ixdn404/ixdi404/ixdf404, it is very important to observe certain design criteria in order to optimize performance of the driver. particular attention needs to be paid to supply bypassing , grounding , and minimizing the output lead inductance . say, for example, the ixdn404 is being used to charge a2500pf capacitive load from 0 to 25 volts in 25ns . using the formula: i= ? v c / ? t, where ? v=25v c=2500pf & ? t=25ns, one can determine that to charge 2500pf to 25 volts in 25ns will take a constant current of 2.5a. (in reality, thecharging current won?t be constant and will peak somewhere around 4a). supply bypassing in order for the design to turn the load on properly, the ixdn404 must be able to draw this 2.5a of current from the power supply in the 25ns. this means that there must be very low impedance between the driver and the power supply. the most common method of achieving this low impedance is to bypass the power supply at the driver with a capacitance value that is a magnitude larger than the load capacitance. usually, this would be achieved by placing two different types of bypassing capacitors, with complementary impedance curves, very close to the driver itself. (these capacitors should be carefully selected, low inductance, low resistance, high-pulse current-service capacitors). lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the lengths of the leads between these bypass capacitors and the ixdn404 to an absolute minimum. groundingin order for the design to turn the load off properly, the ixdn404 must be able to drain this 2.5a of current into an adequate grounding system. there are three paths for returning current that need to be considered: path #1 is between the ixdn404 and its load. path #2 is between the ixdn404 and its power supply. path #3 is between the ixdn404 and whatever logic is driving it. all three of these paths should be as low in resistance and inductance as possible, and thus as short as practical. in addition, every effort should be made to keep these three ground paths distinctly separate. otherwise, the returning ground current from the load may develop a voltage that would have a detrimental effect on the logic line driving the ixdn404. output lead inductance of equal importance to supply bypassing and grounding are issues related to the output lead inductance. every effort should be made to keep the leads between the driver and its load as short and wide as possible. if the driver must be placed farther than 2? (5mm) from the load, then the output leads should be treated as transmission lines. in this case, a twisted- pair should be considered, and the return line of each twisted pair should be placed as close as possible to the ground pin of the driver, and connected directly to the ground terminalof the load. supply bypassing, grounding practices and output lead inductance
11 ixdn404 / ixdi404 / ixdf404 ixys semiconductor gmbhedisonstrasse15 ; d-68623; lampertheim tel: +49-6206-503-0; fax: +49-6206-503627 e-mail: marcom@ixys.de ixys corporation3540 bassett st; santa clara, ca 95054 tel: 408-982-0700; fax: 408-496-0670 e-mail: sales@ixys.net dimenional outline: ixdd404pi dimenional outlines: ixdd404si-ct and ixdd404sia dimenional outlines: ixdd404si-16ct and ixdd404sia-16

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